IndiumV3, Russie, Analysis, bibRecord, 000796

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Identifieur interne : 000796 ( Russie/Analysis ); précédent : 000795; suivant : 000797

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Auteurs : RBID : Pascal:02-0545328

Descripteurs français

Pascal (Inist)
- Photoluminescence, Densité trou, Densité porteur charge, Décomposition raie, Recombinaison radiative, Recombinaison porteur charge, Dopage, Impureté, Addition tellure, Addition indium, Couche épitaxique, Epitaxie phase liquide, Gallium Arsénioantimoniure, Composé ternaire, Etude expérimentale, GaAs0,13Sb0,87, As Ga Sb, Substrat InAs, 7866F.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Carrier density, Charge carrier recombination, Doping, Epitaxial layers, Experimental study, Gallium Antimonides arsenides, Hole density, Impurities, Indium additions, LPE, Line splitting, Photoluminescence, Radiative recombination, Tellurium additions, Ternary compounds.

Abstract

The lattice matched Ga_0.94In_0.06As_0.13Sb_0.87 quaternary solid solutions were grown by liquid phase epitaxy on (100) oriented InAs substrates from In rich melt. The p-type GaIn_0.06As_0.13Sb layers were intentionally undoped and their hole concentration was about p ∼ 5 x 10¹⁶ cm^-3, while n-type GaIn_0.06As_0.13Sb layers were slightly doped with Te and their electron concentration was about n ∼ 10¹⁷ cm^-3. Photoluminescence spectra exhibit single unresolved emission band in the spectral region from 0.65 to 0.8 eV for both types. Spectra were decomposed to elementary Gaussian components. The main mechanisms of radiative recombination were determined for both types of material.

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Pascal:02-0545328

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence of Ga<sub>0.94</sub>
In<sub>0.06</sub>
As<sub>0.13</sub>
Sb<sub>0.87</sub>
 solid solution lattice matched to InAs</title>
<author><name sortKey="Moiseev, K D" uniqKey="Moiseev K">K. D. Moiseev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physical Technology Institute, Russian Academy of Sciences, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Mikhailova, M P" uniqKey="Mikhailova M">M. P. Mikhailova</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physical Technology Institute, Russian Academy of Sciences, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yakovlev, Yu P" uniqKey="Yakovlev Y">Yu. P. Yakovlev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A.F. Ioffe Physical Technology Institute, Russian Academy of Sciences, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Russie</country>
<wicri:noRegion>194021 St. Petersburg</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Simecek, T" uniqKey="Simecek T">T. Simecek</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10</s1>
<s2>16253 Prague</s2>
<s3>CZE</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>16253 Prague</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hulicius, E" uniqKey="Hulicius E">E. Hulicius</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10</s1>
<s2>16253 Prague</s2>
<s3>CZE</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>16253 Prague</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Oswald, J" uniqKey="Oswald J">J. Oswald</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10</s1>
<s2>16253 Prague</s2>
<s3>CZE</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>République tchèque</country>
<wicri:noRegion>16253 Prague</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">02-0545328</idno>
<date when="2002">2002</date>
<idno type="stanalyst">PASCAL 02-0545328 INIST</idno>
<idno type="RBID">Pascal:02-0545328</idno>
<idno type="wicri:Area/Main/Corpus">00E454</idno>
<idno type="wicri:Area/Main/Repository">00EC59</idno>
<idno type="wicri:Area/Russie/Extraction">000796</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0925-3467</idno>
<title level="j" type="abbreviated">Opt. mater. : (Amst.)</title>
<title level="j" type="main">Optical materials : (Amsterdam)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term>
<term>Charge carrier recombination</term>
<term>Doping</term>
<term>Epitaxial layers</term>
<term>Experimental study</term>
<term>Gallium Antimonides arsenides</term>
<term>Hole density</term>
<term>Impurities</term>
<term>Indium additions</term>
<term>LPE</term>
<term>Line splitting</term>
<term>Photoluminescence</term>
<term>Radiative recombination</term>
<term>Tellurium additions</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Photoluminescence</term>
<term>Densité trou</term>
<term>Densité porteur charge</term>
<term>Décomposition raie</term>
<term>Recombinaison radiative</term>
<term>Recombinaison porteur charge</term>
<term>Dopage</term>
<term>Impureté</term>
<term>Addition tellure</term>
<term>Addition indium</term>
<term>Couche épitaxique</term>
<term>Epitaxie phase liquide</term>
<term>Gallium Arsénioantimoniure</term>
<term>Composé ternaire</term>
<term>Etude expérimentale</term>
<term>GaAs0,13Sb0,87</term>
<term>As Ga Sb</term>
<term>Substrat InAs</term>
<term>7866F</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The lattice matched Ga<sub>0.94</sub>
In<sub>0.06</sub>
As<sub>0.13</sub>
Sb<sub>0.87</sub>
 quaternary solid solutions were grown by liquid phase epitaxy on (100) oriented InAs substrates from In rich melt. The p-type GaIn<sub>0.06</sub>
As<sub>0.13</sub>
Sb layers were intentionally undoped and their hole concentration was about p ∼ 5 x 10<sup>16</sup>
 cm<sup>-3</sup>
, while n-type GaIn<sub>0.06</sub>
As<sub>0.13</sub>
Sb layers were slightly doped with Te and their electron concentration was about n ∼ 10<sup>17</sup>
 cm<sup>-3</sup>
. Photoluminescence spectra exhibit single unresolved emission band in the spectral region from 0.65 to 0.8 eV for both types. Spectra were decomposed to elementary Gaussian components. The main mechanisms of radiative recombination were determined for both types of material.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0925-3467</s0>
</fA01>
<fA03 i2="1"><s0>Opt. mater. : (Amst.)</s0>
</fA03>
<fA05><s2>19</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence of Ga<sub>0.94</sub>
In<sub>0.06</sub>
As<sub>0.13</sub>
Sb<sub>0.87</sub>
 solid solution lattice matched to InAs</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>MOISEEV (K. D.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>MIKHAILOVA (M. P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>YAKOVLEV (Yu. P.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SIMECEK (T.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>HULICIUS (E.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>OSWALD (J.)</s1>
</fA11>
<fA14 i1="01"><s1>A.F. Ioffe Physical Technology Institute, Russian Academy of Sciences, Polytekhnicheskaya 26</s1>
<s2>194021 St. Petersburg</s2>
<s3>RUS</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10</s1>
<s2>16253 Prague</s2>
<s3>CZE</s3>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
</fA14>
<fA20><s1>455-459</s1>
</fA20>
<fA21><s1>2002</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>22598</s2>
<s5>354000101505980100</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2002 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>13 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>02-0545328</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Optical materials : (Amsterdam)</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The lattice matched Ga<sub>0.94</sub>
In<sub>0.06</sub>
As<sub>0.13</sub>
Sb<sub>0.87</sub>
 quaternary solid solutions were grown by liquid phase epitaxy on (100) oriented InAs substrates from In rich melt. The p-type GaIn<sub>0.06</sub>
As<sub>0.13</sub>
Sb layers were intentionally undoped and their hole concentration was about p ∼ 5 x 10<sup>16</sup>
 cm<sup>-3</sup>
, while n-type GaIn<sub>0.06</sub>
As<sub>0.13</sub>
Sb layers were slightly doped with Te and their electron concentration was about n ∼ 10<sup>17</sup>
 cm<sup>-3</sup>
. Photoluminescence spectra exhibit single unresolved emission band in the spectral region from 0.65 to 0.8 eV for both types. Spectra were decomposed to elementary Gaussian components. The main mechanisms of radiative recombination were determined for both types of material.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H66F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Densité trou</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Hole density</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Décomposition raie</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Line splitting</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Recombinaison radiative</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Radiative recombination</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Recombinación radiativa</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Recombinaison porteur charge</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Charge carrier recombination</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Recombinación portador carga</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Dopage</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Doping</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Doping</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Impureté</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Impurities</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Addition tellure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Tellurium additions</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Addition indium</s0>
<s5>11</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Indium additions</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Couche épitaxique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Epitaxial layers</s0>
<s5>13</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>LPE</s0>
<s5>14</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Gallium Arsénioantimoniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Gallium Antimonides arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Antimoniuro arseniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Etude expérimentale</s0>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>GaAs0,13Sb0,87</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>As Ga Sb</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Substrat InAs</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7866F</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fN21><s1>322</s1>
</fN21>
<fN82><s1>PSI</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |étape=   Analysis
   |type=    RBID
   |clé=     Pascal:02-0545328
   |texte=   Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
}}

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Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri